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| SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SC1722 DESCRIPTION *With TO-220C package *High breakdown voltage *High transition frequency APPLICATIONS *Low frequency power amplifier *TV horizontal/vertical driver PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter DESCRIPTION Absolute maximum ratings(Ta=25 ) SYMBOL VCBO VCEO VEBO IC PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Ta=25 PC Collector power dissipation TC=25 Tj Tstg Junction temperature Storage temperature 12.5 150 -45~150 Open emitter Open base Open collector CONDITIONS VALUE 300 300 5 0.2 1.8 W UNIT V V V A SavantIC Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER Collector-emitter breakdown voltage Collector-base breakdown voltage Emitter-base breakdown voltage Collector-emitter saturation voltage Base-emitter on voltage Collector cut-off current Collector cut-off current DC current gain Transition frequency Output capacitance CONDITIONS IC=5mA ; RBE=; IC=100A ; IE=0 IE=100A ; IC=0 IC=50mA; IB=5mA IC=50m A ; VCE=10V VCB=250V ;IE=0 VCE=250V; RBE=; IC=50m A ; VCE=10V IC=30m A ; VCE=20V IE=0 ; VCB=50V; f=1MHz 50 MIN 300 300 5 2SC1722 SYMBOL V(BR)CEO V(BR)CBO V(BR)EBO VCEsat VBE ICBO ICEO hFE fT COB TYP. MAX UNIT V V V 1.0 0.68 2.0 0.9 0.1 2 300 V V A A 80 4.3 MHz pF 2 SavantIC Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SC1722 Fig.2 Outline dimensions (unindicated tolerance:0.10 mm) 3 |
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